Semiconductor structure and manufacturing method thereof

ABSTRACT

A method of manufacturing a semiconductor structure includes following operations. A first die is provided. A first molding is formed to encapsulate the first die. A second die is disposed over the first molding. A mold chase is disposed over the second die and the first molding. The mold chase includes a protrusion protruded from the mold chase towards the first molding. A molding material is disposed between the mold chase and the first molding. A second molding is formed to surround the second die. The second die is at least partially covered by the second molding. The disposing of the mold chase includes surrounding the protrusion of the mold chase by the molding material.

PRIORITY CLAIM AND CROSS-REFERENCE

This patent is a divisional application of U.S. patent applicant Ser.No. 16/736,464, filed on Jan. 7, 2020, entitled of “SEMICONDUCTORSTRUCTURE AND MANUFACTURING METHOD THEREOF”, which is a divisionalapplication of U.S. patent application Ser. No. 15/459,691 filed on Mar.15, 2017, entitled of “SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHODTHEREOF”, now U.S. Pat. No. 10,529,666 B2, which claims priority to U.S.Provisional Application No. 62/427,651 filed on Nov. 29, 2016, entitled“Semiconductor Structure and Manufacturing Method Thereof”; each ofthese applications are incorporated herein by reference in theirentireties.

BACKGROUND

Electronic equipment using semiconductor devices are essential for manymodern applications. With the advancement of electronic technology, thesemiconductor devices are becoming increasingly smaller in size whilehaving greater functionality and greater amounts of integratedcircuitry. Due to the miniaturized scale of the semiconductor device, awafer level packaging (WLP) is widely used for its low cost andrelatively simple manufacturing operations. During the WLP operation, anumber of semiconductor components are assembled on the semiconductordevice. Furthermore, numerous manufacturing operations are implementedwithin such a small semiconductor device.

However, the manufacturing operations of the semiconductor deviceinvolve many steps and operations on such a small and thin semiconductordevice. The manufacturing of the semiconductor device in a miniaturizedscale becomes more complicated. An increase in a complexity ofmanufacturing the semiconductor device may cause deficiencies such aspoor structural configuration, delamination of components, or otherissues, resulting in a high yield loss of the semiconductor device andincrease of manufacturing cost. As such, there are many challenges formodifying a structure of the semiconductor devices and improving themanufacturing operations.

BRIEF DESCRIPTION OF THE DRAWINGS

Aspects of the present disclosure are best understood from the followingdetailed description when read with the accompanying figures. It isemphasized that, in accordance with the standard practice in theindustry, various features are not drawn to scale. In fact, thedimensions of the various features may be arbitrarily increased orreduced for clarity of discussion.

FIG. 1 is a schematic cross sectional view of a semiconductor structurein accordance with some embodiments of the present disclosure.

FIG. 2 is a schematic cross sectional view of a semiconductor structurein accordance with some embodiments of the present disclosure.

FIG. 3 is a schematic cross sectional view of a semiconductor structurein accordance with some embodiments of the present disclosure.

FIG. 4 is a schematic cross sectional view of a semiconductor structurein accordance with some embodiments of the present disclosure.

FIG. 5 is a schematic cross sectional view of a semiconductor structurein accordance with some embodiments of the present disclosure.

FIG. 6 is a schematic cross sectional view of a semiconductor structurein accordance with some embodiments of the present disclosure.

FIG. 7 is a schematic cross sectional view of a semiconductor structurein accordance with some embodiments of the present disclosure.

FIG. 8 is a schematic cross sectional view of a semiconductor structurein accordance with some embodiments of the present disclosure.

FIG. 9 is a schematic cross sectional view of a semiconductor structurein accordance with some embodiments of the present disclosure.

FIG. 10 is a schematic cross sectional view of a semiconductor structurein accordance with some embodiments of the present disclosure.

FIG. 11 is a schematic cross sectional view of a semiconductor structurein accordance with some embodiments of the present disclosure.

FIG. 12 is a flow diagram of a method of manufacturing a semiconductorstructure in accordance with some embodiments of the present disclosure.

FIGS. 12A-12J are schematic views of manufacturing a semiconductorstructure by a method of FIG. 12 in accordance with some embodiments ofthe present disclosure.

DETAILED DESCRIPTION OF THE DISCLOSURE

The following disclosure provides many different embodiments, orexamples, for implementing different features of the provided subjectmatter. Specific examples of components and arrangements are describedbelow to simplify the present disclosure. These are, of course, merelyexamples and are not intended to be limiting. For example, the formationof a first feature over or on a second feature in the description thatfollows may include embodiments in which the first and second featuresare formed in direct contact, and may also include embodiments in whichadditional features may be formed between the first and second features,such that the first and second features may not be in direct contact. Inaddition, the present disclosure may repeat reference numerals and/orletters in the various examples. This repetition is for the purpose ofsimplicity and clarity and does not in itself dictate a relationshipbetween the various embodiments and/or configurations discussed.

Further, spatially relative terms, such as “beneath,” “below,” “lower,”“above,” “upper” and the like, may be used herein for ease ofdescription to describe one element or feature's relationship to anotherelement(s) or feature(s) as illustrated in the figures. The spatiallyrelative terms are intended to encompass different orientations of thedevice in use or operation in addition to the orientation depicted inthe figures. The apparatus may be otherwise oriented (rotated 90 degreesor at other orientations) and the spatially relative descriptors usedherein may likewise be interpreted accordingly.

Other features and processes may also be included. For example, testingstructures may be included to aid in the verification testing of the 3Dpackaging or 3DIC devices. The testing structures may include, forexample, test pads formed in a redistribution layer or on a substratethat allows the testing of the 3D packaging or 3DIC, the use of probesand/or probe cards, and the like. The verification testing may beperformed on intermediate structures as well as the final structure.Additionally, the structures and methods disclosed herein may be used inconjunction with testing methodologies that incorporate intermediateverification of known good dies to increase the yield and decreasecosts.

A die is fabricated and singulated from a semiconductive wafer. Aftersingulation, the die is packaged to become a semiconductor package andintegrated with another die or package. The die is encapsulated by amolding, and I/O terminals of the die are routed out through conductivelines disposed within a dielectric layer, and the die is electricallyconnected to another dies or packages by a via extending through themolding. The dies or packages are encapsulated by molding. However, suchconfiguration may not be suitable for dies or packages which areconfigured for sensing purpose or configured as a sensor. For example, adie or a package is required to be partially or entirely exposed fromthe molding in order to perform the sensing function.

In the present disclosure, a semiconductor structure with improvement isdisclosed. The semiconductor structure includes a die (or a package) atleast partially exposed from a molding. A predetermined portion of asurface of the die or a predetermined surface of the die is exposed fromthe molding in accordance with design requirements. A design of a moldchase is modified in order to form the molding which exposes at least aportion or a surface of the die. Therefore, the die with exposed portionor exposed surface facilitates predetermined sensing function.

FIG. 1 is a schematic cross sectional view of a semiconductor structure100 in accordance with various embodiments of the present disclosure. Insome embodiments, the semiconductor structure 100 includes a first die101, a first molding 102, a second die 103 and a second molding 104. Insome embodiments, the semiconductor structure 100 is a semiconductorpackage. In some embodiments, the semiconductor structure 100 is anintegrated fan out (InFO) package, where I/O terminals of the first die101 are fanned out and redistributed over a surface of the first die 101in a greater area. In some embodiments, the semiconductor structure 100is configured to perform sensing function.

In some embodiments, the first die 101 is fabricated with apredetermined functional circuit within the first die 101. In someembodiments, the first die 101 is singulated from a semiconductive waferby a mechanical or laser blade. In some embodiments, the first die 101comprises a variety of electrical circuits suitable for a particularapplication. In some embodiments, the electrical circuits includevarious devices such as transistors, capacitors, resistors, diodesand/or the like.

In some embodiments, the first die 101 comprises of any one of variousknown types of semiconductor devices such as memories (such as SRAMS,flash memories, etc.), microprocessors, application-specific integratedcircuits (ASICs), or the like. In some embodiments, the first die 101 isa logic device die, central computing unit (CPU) die, or the like. Insome embodiments, the first die 101 is a system on chip (SOC) thatintegrates all electronic components into a single die. In someembodiments, the first die 101 is a die, a chip or a package. In someembodiments, the first die 101 has a top cross section (a cross sectionfrom the top view of the semiconductor structure 100 as shown in FIG. 1)in a quadrilateral, a rectangular or a square shape.

In some embodiments, the first die 101 includes a substrate whichcomprises semiconductive materials such as silicon. In some embodiments,the substrate of the first die 101 includes several circuitries andelectrical components disposed thereon. In some embodiments, thesubstrate of the first die 101 is a silicon substrate. In someembodiments, the first die 101 includes a top surface 101 a, a bottomsurface 101 b opposite to the top surface 101 a, a sidewall 101 c, and afirst conductive pad 101 d disposed over or within the top surface 101a. In some embodiments, the top surface 101 a is a front side or activeside of the first die 101. In some embodiments, the bottom surface 101 bis a back side or inactive side of the first die 101. In someembodiments, the sidewall 101 c is substantially orthogonal to the topsurface 101 a and the bottom surface 101 b. In some embodiments, thesidewall 101 c is disposed between the top surface 101 a and the bottomsurface 101 b.

In some embodiments, the first conductive pad 101 d is electricallyconnected to a circuitry external to the first die 101, such that acircuitry of the first die 101 is electrically connected to thecircuitry external to the first die 101 through the first conductive pad101 d. In some embodiments, the first conductive pad 101 d is configuredto electrically couple with a conductive trace or a conductivestructure. In some embodiments, the first conductive pad 101 d includesgold, silver, copper, nickel, tungsten, aluminum, palladium and/oralloys thereof.

In some embodiments, the first molding 102 surrounds or encapsulates thefirst die 101. In some embodiments, all surfaces of the first die 101are interfaced with the first molding 102. In some embodiments, the topsurface 101 a and the sidewall 101 c of the first die 101 are interfacedwith or in contact to the first molding 102. In some embodiments, thefirst molding 102 can be a single layer film or a composite stack. Insome embodiments, the first molding 102 includes various materials, suchas molding compound, molding underfill, epoxy, resin, or the like. Insome embodiments, the first molding 102 has a high thermal conductivity,a low moisture absorption rate and a high flexural strength.

In some embodiments, the second die 103 is disposed over the firstmolding 102. In some embodiments, the second die 103 is fabricated witha predetermined functional circuit within the second die 103. In someembodiments, the second die 103 comprises a variety of electricalcircuits suitable for a particular application. In some embodiments, thesecond die 103 is configured to perform sensing function.

In some embodiments, the electrical circuits include various devicessuch as transistors, capacitors, resistors, diodes and/or the like. Insome embodiments, the second die 103 comprises of any one of variousknown types of semiconductor devices such as memories (such as SRAMS,flash memories, etc.), microprocessors, application-specific integratedcircuits (ASICs), or the like. In some embodiments, the second die 103is a die, a chip or a package. In some embodiments, the second die 103is a sensor or a sensing package. In some embodiments, the second die103 has a top cross section (a cross section from the top view of thesemiconductor structure 100 as shown in FIG. 1) in a quadrilateral, arectangular or a square shape.

In some embodiments, the second die 103 includes a substrate whichcomprises semiconductive materials such as silicon. In some embodiments,the substrate of the second die 103 includes several circuitries andelectrical components disposed thereon. In some embodiments, thesubstrate of the second die 103 is a silicon substrate. In someembodiments, second die 103 includes a first surface 103 a, a secondsurface 103 b opposite to the first surface 103 a, a sidewall 103 c, anda second conductive pad 103 d disposed over or within the first surface103 a.

In some embodiments, the first surface 103 a is a front side or activeside of the second die 103. In some embodiments, the second surface 103b is a back side or inactive side of the second die 103. In someembodiments, the first surface 103 a of the second die 103 faces thefirst molding 102. In some embodiments, the sidewall 103 c issubstantially orthogonal to the first surface 103 a and the secondsurface 103 b. In some embodiments, the sidewall 103 c is disposedbetween the first surface 103 a and the second surface 130 b. In someembodiments, a sensing element in the second die 103 is configured totransmit or receive a signal from ambient environment through the secondsurface 103 b or the sidewall 103 c. In some embodiments, the sensingelement is a transmitter, a receiver, a transceiver, or etc.

In some embodiments, the second conductive pad 103 d is electricallyconnected to a circuitry external to the second die 103, such that acircuitry of the second die 103 is electrically connected to thecircuitry external to the second die 103 through the second conductivepad 103 d. In some embodiments, the second conductive pad 103 d isconfigured to electrically couple with a conductive trace or aconductive structure. In some embodiments, the second conductive pad 103d includes gold, silver, copper, nickel, tungsten, aluminum, palladiumand/or alloys thereof.

In some embodiments, the second molding 104 is disposed over the firstmolding 102 and surrounds the second die 103. In some embodiments, thesecond die 103 is at least partially exposed from the second molding104. In some embodiments, a portion of the second die 103 is protrudedfrom the second molding 104. In some embodiments, the second surface 103b or the sidewall 103 c of the second die 103 is partially or entirelyexposed from the second molding 104. In some embodiments, the entiresecond surface 103 b of the second die 103 is exposed from the secondmolding 104. In some embodiments, a portion of the sidewall 103 c of thesecond die 103 is interfaced with or in contact with the second molding104, and another portion of the sidewall 103 c of the second die 103 isexposed from the second molding 104. In some embodiments, the secondsurface 103 b of the second die 103 is at a level substantially higherthan a level of a top surface 104 a of the second molding 104. In someembodiments, the second surface 103 b or the sidewall 103 c is partiallyor entirely exposed to ambient environment. In some embodiments, thesecond surface 103 b or the sidewall 103 c is not covered by or is notin contact with any component, such that the sensing element in thesecond die 103 can sense, transmit or receive a signal from ambientenvironment through the second surface 103 b or the sidewall 103 c.

In some embodiments, the second molding 104 includes a recess 104 b. Insome embodiments, the second die 103 is disposed within the recess 104 band is contacted with a sidewall of the recess 104 b. In someembodiments, a width W1 of the recess 104 b is substantially same as awidth W2 of the second die 103. In some embodiments, the second molding104 can be a single layer film or a composite stack. In someembodiments, the second molding 104 includes various materials, such asmolding compound, molding underfill, epoxy, resin, or the like. In someembodiments, the second molding 104 has a high thermal conductivity, alow moisture absorption rate and a high flexural strength.

In some embodiments, a first dielectric layer 105 is disposed over thefirst molding 102. In some embodiments, the first dielectric layer 105is disposed between the first molding 102 and the second molding 103. Insome embodiments, the first dielectric layer 105 is disposed between thefirst molding 102 and the second die 103. In some embodiments, the firssurface 103 a of the second die 103 faces the first dielectric layer105. In some embodiments, the first surface 103 a of the second die 103is interfaces with the first dielectric layer 105. In some embodiments,the first dielectric layer 105 includes dielectric material such assilicon oxide, silicon nitride, silicon carbide, silicon oxynitride orthe like.

In some embodiments, a first interconnect structure 106 is surrounded byor disposed within the first dielectric layer 105. In some embodiments,the first interconnect structure 106 is extended within the firstdielectric layer 105 and between the second die 103 and the firstmolding 102. In some embodiments, a portion of the first interconnectstructure 106 is coupled with the second conductive pad 103 d, so thatthe second die 103 is electrically connected to the first die 101through the first interconnect structure 106. In some embodiments, theportion of the first interconnect structure 106 is exposed from thefirst dielectric layer 105. In some embodiments, the second die 103 isdisposed over a portion of the first interconnect structure 106 exposedfrom the first dielectric layer 105. In some embodiments, the firstinterconnect structure 106 includes conductive material such as gold,silver, copper, nickel, tungsten, aluminum, palladium and/or alloysthereof.

In some embodiments, a second dielectric layer 107 is disposed over thefirst molding 102 and the first die 101. In some embodiments, the seconddielectric layer 107 is interfaced with the top surface 101 a of thefirst die 101. In some embodiments, the second dielectric layer 107includes dielectric material such as silicon oxide, silicon nitride,silicon carbide, silicon oxynitride or the like.

In some embodiments, a second interconnect structure 108 is surroundedby or disposed within the second dielectric layer 107. In someembodiments, the second interconnect structure 108 is extended withinthe second dielectric layer 107. In some embodiments, a portion of thesecond interconnect structure 108 is coupled with the first conductivepad 101 d to electrically connect to the first die 101. In someembodiments, the portion of the second interconnect structure 108 isexposed from the second dielectric layer 107. In some embodiments, thesecond interconnect structure 108 includes conductive material such asgold, silver, copper, nickel, tungsten, aluminum, palladium and/oralloys thereof.

In some embodiments, a connector 109 is disposed below the seconddielectric layer 107. In some embodiments, the connector 109 iselectrically coupled with the second interconnect structure 108. In someembodiments, the connector 109 is disposed below or coupled with aportion of the second interconnect structure 108 exposed from the seconddielectric layer 107. In some embodiments, a bump pad is disposed overthe portion of the second interconnect structure 108, and the connector109 is disposed over the bump pad. In some embodiments, the connector109 is configured to electrically connect to a circuitry or a conductivestructure. In some embodiments, the connector 109 includes conductivematerial such as includes solder, copper, nickel, gold or etc. In someembodiments, the connector 109 is a conductive bump, a solder ball, aball grid array (BGA) ball, controlled collapse chip connection (C4)bump, microbump, a pillar, a post or the like. In some embodiments, theconnector 109 is in a spherical, hemispherical or cylindrical shape.

In some embodiments, a conductive via 110 is surrounded by the firstmolding 102. In some embodiments, the conductive via 110 is extendedthrough the first molding 102. In some embodiments, the conductive via110 is a through integrated fan out via (TIV) extending through thefirst molding 102. In some embodiments, the conductive via 110 iselectrically connected to the first interconnect structure 106 or thesecond interconnect structure 108. In some embodiments, the first die101 is electrically connected to the second die 103 through theconductive via 110. In some embodiments, the conductive via 110 includesconductive material such as gold, silver, copper, nickel, tungsten,aluminum, tin and/or alloys thereof.

FIG. 2 is a schematic cross sectional view of a semiconductor structure200 in accordance with various embodiments of the present disclosure. Insome embodiments, the semiconductor structure 200 includes a first die101, a first molding 102, a second die 103 and a second molding 104,which have similar configurations as described above or illustrated inFIG. 1.

In some embodiments, the second molding 104 includes a recess 104 bextending through the second molding 104. In some embodiments, thesecond die 103 is disposed within the recess 104 b. In some embodiments,there is a gap between the second die 103 and the second molding 104. Insome embodiments, the second surface 103 b and the sidewall 103 c of thesecond die 103 are apart from the second molding 104. In someembodiments, the second surface 103 b and the sidewall 103 c of thesecond die 103 are entirely exposed from the second molding 104 and donot contact with the second molding 104.

In some embodiments, a width W1 of the recess 104 b is substantiallygreater than a width W2 of the second die 103. In some embodiments, afirst dielectric layer 105 is disposed between the first molding 102 andthe second die 103, and a first interconnect structure 106 is disposedwithin the first dielectric layer 105, and the recess 104 b is disposedover a portion of the first interconnect structure 106 exposed from thefirst dielectric layer 105. In some embodiments, such partial or entireexposure of the second die 103 allows the second die 103 performingsensing functions.

FIG. 3 is a schematic cross sectional view of a semiconductor structure300 in accordance with various embodiments of the present disclosure. Insome embodiments, the semiconductor structure 300 includes a first die101, a first molding 102, a second die 103 and a second molding 104,which have similar configurations as described above or illustrated inFIG. 1 or 2.

In some embodiments, the second molding 104 includes a recess 104 bdisposed over the second die 103. In some embodiments, the second die103 is partially covered by the second molding 104. In some embodiments,the recess 104 a is disposed over the second surface 103 b of the seconddie 103. In some embodiments, a level of a top surface 104 a of thesecond molding 104 is substantially higher than a level of the secondsurface 103 b of the second die 103. In some embodiments, a portion ofthe second surface 103 b of the second die 103 is exposed from thesecond molding 104. In some embodiments, the sidewall 103 c of thesecond die 103 is entirely interfaced with or in contact to the secondmolding 104. In some embodiments, a width W1 of the recess 104 b issubstantially less than a width W2 of the second die 103.

FIGS. 4-6 are schematic cross sectional views of semiconductorstructures (400, 500 or 600) respectively in accordance with variousembodiments of the present disclosure. In some embodiments, thesemiconductor structures (400, 500 or 600) respectively include a firstdie 101, a first molding 102, a second die 103 and a second molding 104,which have similar configurations as described above or illustrated inFIGS. 1-3 respectively.

In some embodiments, the first die 101 is flipped, that a top surface101 a of the first die 101 faces the second die 103 while a bottomsurface 101 b of the first die 101 is disposed distal to the second die103. In some embodiments, the bottom surface 101 b and a sidewall 101 cof the first die 101 are interfaced with the first molding 102, and thetop surface 101 a of the first die 101 is exposed from the first molding102. In some embodiments, the top surface 101 a of the first die 101 isinterfaced with a first dielectric layer 105 disposed between the firstdie 101 and the second die 103. In some embodiments, the firstconductive pad 101 d of the first die 101 is electrically connected to afirst interconnect structure 106 disposed within the first dielectriclayer 105.

In some embodiments as shown in FIG. 4, the top surface 104 a of thesecond molding 104 is a curved surface. In some embodiments, the topsurface 104 a is in convex configuration. In some embodiments, thesecond die 103 includes a conductive bump 103 e disposed under the firstsurface 103 a of the second die 103. In some embodiments, the conductivebump 103 e is electrically connected to the first interconnect structure106, such that the first die 101 is electrically connected to the seconddie 103 through the conductive bump 103 e and the first interconnectstructure 106. In some embodiments, some of the second molding 104surround the conductive bump 103 e and are disposed between the seconddie 103 and the first dielectric layer 105.

In some embodiments as shown in FIG. 5, the second die 103 is disposedwithin the recess 104 b of the second molding 104. In some embodiments,a sidewall 104 c of the recess 104 b is a curved surface. In someembodiments, the sidewall 104 c is curved away from the second die 103.In some embodiments, the sidewall 104 c is in a convex configuration.

FIGS. 7-10 are schematic cross sectional views of semiconductorstructures (700, 800, 900 and 1000) respectively in accordance withvarious embodiments of the present disclosure. In some embodiments, thesemiconductor structures (700, 800, 900 and 1000) respectively include afirst die 101, a first molding 102, a second die 103 and a secondmolding 104, which have similar configurations as described above orillustrated in FIGS. 1-3 respectively.

In some embodiments as shown in FIGS. 7 and 8, the semiconductorstructures (700 and 800) respectively include an adhesive 115 disposedbetween the first dielectric layer 105 and the first die 101. In someembodiments, the adhesive 115 includes glue, a die attach film (DAF),etc. In some embodiments, the adhesive 115 is surrounded by the firstmolding 102. In some embodiments, the adhesive 115 is disposed over thebottom surface 101 b of the first die 101.

In some embodiments as shown in FIGS. 9 and 10, the semiconductorstructures (900 and 1000) respectively include the adhesive 115 disposedbetween the second dielectric layer 107 and the first die 101. In someembodiments, the adhesive 115 is surrounded by the first molding 102. Insome embodiments, the adhesive 115 is disposed over the bottom surface101 b of the first die 101.

FIG. 11 is a schematic cross sectional view of a semiconductor structure1100 in accordance with various embodiments of the present disclosure.In some embodiments, the semiconductor structure 1100 is combination ofthe semiconductor structures (100, 200 or 300). In some embodiments, thesemiconductor structure 1100 includes a first die 101 and a firstmolding 102, which have similar configurations as described above orillustrated in any one of FIGS. 1-10. In some embodiments, thesemiconductor structure 1100 includes second dies (103-1, 103-2, 103-3)which are in similar configuration as the second die 103 illustrated inFIGS. 1-3 respectively. In some embodiments, the semiconductor structure700 includes a second molding 104 which is in similar configuration asthe second molding 104 illustrated in FIGS. 1-3 respectively. In someembodiments, the second molding 104 includes recesses (104 b-1, 104 b-2,104 b-3) which are in similar configuration as the recess 104 billustrated in FIGS. 1-3 respectively.

In some embodiments, the semiconductor structure 1100 includes a thirddie 111 encapsulated by the second molding 104. In some embodiments, thethird die 111 is a die, a chip or a package. In some embodiments, thethird die 111 is disposed adjacent to the second die (103-1, 103-2 or103-3). In some embodiments, the third die 111 is disposed between twoof the second dies (103-1, 103-2 or 103-3). In some embodiments, athickness of the third die 111 is substantially less than a thickness ofthe second die (103-1, 103-2 or 103-3). In some embodiments, the thirddie 111 includes a top surface 111 a, a bottom surface 111 b opposite tothe top surface 111 a, a sidewall 111 c between the top surface 111 aand the bottom surface 111 b, and a third conductive pad 111 d disposedover the top surface 111 a. In some embodiments, a top surface 104 a ofthe second molding 104 is at a level substantially higher than a levelof the bottom surface 111 b of the third die 111. In some embodiments,the bottom surface 111 b and the sidewall 111 c of the third die 111 arecontacted with the second molding 104.

In the present disclosure, a method of manufacturing a semiconductorstructure (100, 200, 300, 400, 500, 600, 700, 800, 900, 1000 or 1100) isalso disclosed. In some embodiments, a semiconductor structure (100,200, 300, 400, 500, 600, 700, 800, 900, 1000 or 1100) is formed by amethod 1200. The method 1200 includes a number of operations and thedescription and illustration are not deemed as a limitation as thesequence of the operations. FIG. 12 is an embodiment of the method 1200of manufacturing the semiconductor structure (100, 200, 300, 400, 500,600, 700, 800, 900, 1000 or 1100). The method 1200 includes a number ofoperations (1201, 1202, 1203, 1204, 1205 and 1206).

In operation 1201, a first die 101 is provided or received as shown inFIG. 12A. In some embodiments, the first die 101 is a die, a chip or apackage. In some embodiments, the first die 101 comprises a variety ofelectrical circuits suitable for a particular application. In someembodiments, the first die 101 has similar configuration as describedabove or illustrated in any one of FIGS. 1-11. In some embodiments, acarrier 112 is provided for temporarily supporting the first die 101 andother components subsequently disposed thereon. In some embodiments, thecarrier 112 is a substrate or a wafer. In some embodiments, the carrier112 includes silicon, glass, ceramic or the like. In some embodiments, atop surface 101 a of the first die 101 is disposed over the carrier 112.

In operation 1202, a first molding 102 is formed as shown in FIG. 12B.In some embodiments, the first molding 102 encapsulates the first die101. In some embodiments, the bottom surface 101 b and the sidewall 101c of the first die 101 are contacted with the first molding 102. In someembodiments, the first molding 102 is formed by transfer molding,injection molding or any other suitable operations. In some embodiments,the first molding 102 has similar configuration as described above orillustrated in any one of FIGS. 1-11.

In some embodiments as shown in FIG. 12C, a conductive via 110 issurrounded by the first molding 102. In some embodiments, the conductivevia 110 extends through the first molding 102. In some embodiments, theconductive via 110 is formed by removing a portion of the first molding102 to form an opening and disposing a conductive material into theopening. In some embodiments, the conductive material is disposed byelectroplating, electroless plating or other suitable operations. Insome embodiments, the opening is formed by photolithography and etchingoperations. In some embodiments, a portion of the conductive via 110 isexposed from the first molding 102. In some embodiments, the conductivevia 110 has similar configuration as described above or illustrated inany one of FIGS. 1-11.

In some embodiments as shown in FIG. 12D, a first dielectric layer 105and a first interconnect structure 106 are formed over the first molding102. In some embodiments, the first dielectric layer 105 is disposedover the first molding 102 by spin coating, chemical vapor deposition(CVD) or any other suitable operations. In some embodiments, the firstinterconnect structure 106 is disposed within the first dielectric layer105. In some embodiments, the first dielectric layer 105 is patterned byphotolithography and etching operations. In some embodiments, the firstinterconnect structure 106 is formed by removing a portion of the firstdielectric layer 105 and then disposing a conductive material. In someembodiments, the conductive material is disposed by electroplating,electroless plating or other suitable operations. In some embodiments,the first interconnect structure 106 is electrically connected to theconductive via 110. In some embodiments, a portion of the firstinterconnect structure 106 is exposed from the first dielectric layer105. In some embodiments, the first dielectric layer 105 and the firstinterconnect structure 106 have similar configurations as describedabove or illustrated in any one of FIGS. 1-11.

In operation 1203, a second die (103-1, 103-3) is disposed over thefirst molding 102 as shown in FIG. 12E. In some embodiments, the seconddie (103-1, 103-3) is mounted over the first molding 102. In someembodiments, the second die (103-1, 103-3) is disposed over the portionof the first interconnect structure 106 exposed from the firstdielectric layer 105 to electrically connect with the first interconnectstructure 106 or the first die 101. In some embodiments, a first surface(103 a-1, 103 a-3) of the second die (103-1, 103-3) is disposed over thefirst dielectric layer 105. In some embodiments, a second conductive pad(103 d-1, 103 d-3) of the second die (103-1, 103-3) is disposed over andelectrically connected to the first interconnect structure 106. In someembodiments, the second die (103-1, 103-3) has similar configuration asdescribed above or illustrated in any one of FIGS. 1-11.

In some embodiments, a third die 111 is disposed over the first molding102 as shown in FIG. 12E. In some embodiments, the third die 111 ismounted over the first molding 102. In some embodiments, the third die111 is disposed over the portion of the first interconnect structure 106exposed from the first dielectric layer 105 to electrically connect withthe first interconnect structure 106 or the first die 101. In someembodiments, a third conductive pad 111 d of the third die 111 isdisposed over and electrically connected to the first interconnectstructure 106. In some embodiments, the third die 111 has similarconfiguration as described above or illustrated in FIG. 11.

In operation 1204, a mold chase 113 is disposed over the second die(103-1, 103-3), the first molding 102 and the third die 111 as shown inFIG. 12F. In some embodiments, the mold chase 113 is configured forforming a molding. In some embodiments, the mold chase 113 is in apredetermined shape or configuration. In some embodiments, the moldchase 113 includes a protrusion 113 a protruded from the mold chasetowards the first molding 102. In some embodiments, the protrusion 113 ais disposed over the second die 103-3 or adjacent to the second die103-1. In some embodiments, the protrusion 113 a is disposed over or iscontacted with the first dielectric layer 105 or the first interconnectstructure 106. In some embodiments, the mold chase 113 includes steel orthe like. In some embodiments, a release film is disposed over a surfaceof the mold chase 113 facing to the first molding 102 and the second die(103-1, 103-3).

In operation 1205, a molding material 114 is disposed between the moldchase 113 and the first molding 102 as shown in FIG. 12G. In someembodiments, a space defined by the mold chase 113, the second die(103-1, 103-3) and the first dielectric layer 105 is filled by themolding material 114. In some embodiments, the molding material 114surrounds the protrusion 113 a. In some embodiments, the moldingmaterial 114 includes molding compound, molding underfill, epoxy, resin,or the like.

In operation 1206, a second molding 104 is formed as shown in FIG. 12H.In some embodiments, the second molding 104 is formed after curing themolding material 114. In some embodiments, the mold chase 113 is removedafter the formation of the second molding 104. In some embodiments, thesecond die (103-1, 103-3) is surrounded by the second molding 104. Insome embodiments, the third die 111 is encapsulated by the secondmolding 104. In some embodiments, the second die (103-1, 103-3) is atleast partially exposed from the second molding 104. In someembodiments, the second molding 104 is formed by transfer molding,compression molding, print molding or any other suitable operations.

In some embodiments, the second molding 104 includes a recess (104 b-1,104 b-2, 104 b-3). In some embodiments, a sidewall of the recess (104b-1, 104 b-2, 104 b-3) is conformal to an outer surface of theprotrusion 113 a of the mold chase 113. In some embodiments, the recess104 b-1 surrounds the second die 103-1. In some embodiments, the recess104 b-2 extends through the second molding 104. In some embodiments, therecess 104 b-3 is disposed over the second die 103-3.

In some embodiments, the second molding 104 is formed by disposing themolding material 114 over the second die (103-1, 103-3), the third die111 and the first dielectric layer 105, and inserting the protrusion 113a of the mold chase 113 into the molding material 114. In someembodiments, the recess (104 b-1, 104 b-2, 104 b-3) is formed and thesidewall of the recess (104 b-1, 104 b-2, 104 b-3) is conformal to theouter surface of the protrusion 113 a of the mold chase 113 after theinsertion of the protrusion 113 a.

In some embodiments as shown in FIG. 121, another second die 103-2 isdisposed within the recess 104 b-2. In some embodiments, there is a gapbetween the second die 103-2 and the second molding 104. In someembodiments, the second surface 103 b-2 and the sidewall 103 c-2 of thesecond die 103-2 are apart from the second molding 104. In someembodiments, the second surface 103 b-2 and the sidewall 103 c-2 of thesecond die 103-2 are entirely exposed from the second molding 104 and donot contact with the second molding 104. In some embodiments, the seconddie 103-2 is electrically connected to the first die 101 through thefirst interconnect structure 106. In some embodiments, the secondmolding 104 has similar configuration as described above or illustratedin any one of FIGS. 1-11.

In some embodiments as shown in FIG. 12J, the carrier 112 is removed,and a second dielectric layer 107 and a second interconnect structure108 are formed over the first molding 102 and the top surface 101 a ofthe first die 101. In some embodiments, the second dielectric layer 107is disposed by spin coating, chemical vapor deposition (CVD) or anyother suitable operations. In some embodiments, the second interconnectstructure 108 is disposed within the second dielectric layer 107. Insome embodiments, the second dielectric layer 107 is patterned byphotolithography and etching operations.

In some embodiments, the second interconnect structure 108 is formed byremoving a portion of the second dielectric layer 107 and then disposinga conductive material. In some embodiments, the conductive material isdisposed by electroplating, electroless plating or other suitableoperations. In some embodiments, the second interconnect structure 108is electrically connected to the conductive via 110. In someembodiments, a portion of the second interconnect structure 108 isexposed from the second dielectric layer 107. In some embodiments, thesecond dielectric layer 107 and the second interconnect structure 108have similar configurations as described above or illustrated in any oneof FIGS. 1-11.

In some embodiments as shown in FIG. 12J, a connector 109 is disposedunder a portion of the second interconnect structure 108 to electricallyconnect to the second interconnect structure 108. In some embodiments,the connector 109 is disposed by ball dropping, solder pasting, stencilprinting or other suitable operations. In some embodiments, theconnector 109 has similar configuration as described above orillustrated in any one of FIGS. 1-11. In some embodiments, asemiconductor structure 1100 is formed. In some embodiments, thesemiconductor structure 700 has similar configuration as thesemiconductor structure 700 illustrated in FIG. 11.

In the present disclosure, a semiconductor structure with improvement isdisclosed. The semiconductor structure includes a die or a package atleast partially exposed from a molding. A predetermined portion of asurface of the die or a predetermined surface of the die is exposed fromthe molding. The die with exposed portion or exposed surface facilitatespredetermined sensing function.

In some embodiments, a method of manufacturing a semiconductor structureis provided. The method includes following operations. A first die isprovided. A first molding is formed to encapsulate the first die. Asecond die is disposed over the first molding. A mold chase is disposedover the second die and the first molding. In some embodiments, the moldchase includes a protrusion protruded from the mold chase towards thefirst molding. A molding material is disposed between the mold chase andthe first molding. A second molding is formed to surround the seconddie. The second die is at least partially covered by the second molding.The disposing of the mold chase includes surrounding the protrusion ofthe mold chase by the molding material.

In some embodiments, a semiconductor structure is provided. Thesemiconductor structure includes a first dielectric layer, a first die,a second die, a first molding, and a second molding. The first die isdisposed under the first dielectric layer, and has a first surfacefacing the first dielectric layer and a second surface opposite to thefirst surface. The second die is disposed over the first dielectriclayer, and has a third surface facing the first dielectric layer and afourth surface opposite to the third surface. The second die has asidewall between the third surface and the fourth surface. The firstmolding encapsulates the first die. The second molding is disposed overthe first die and the first dielectric layer. The first surface of thefirst die and the third surface of the second die are in contact withthe first dielectric layer, and the fourth surface and the sidewall ofthe second die is entirely exposed through the second molding.

In some embodiments, a semiconductor structure is provided. Thesemiconductor structure includes a first dielectric layer, a first die,a second die, a first molding, and a second molding. The first die isdisposed under the first dielectric layer, and has a first surfacefacing the first dielectric layer and a second surface opposite to thefirst surface. The second die is disposed over the first dielectriclayer, and has a third surface facing the first dielectric layer and afourth surface opposite to the third surface. The first moldingencapsulates the first die. The second molding is disposed over thefirst die and the first dielectric layer. The first surface of the firstdie and the third surface of the second die are in contact with thefirst dielectric layer. The fourth surface of the second die ispartially exposed through the second molding and partially covered bythe second molding.

The foregoing outlines features of several embodiments so that thoseskilled in the art may better understand the aspects of the presentdisclosure. Those skilled in the art should appreciate that they mayreadily use the present disclosure as a basis for designing or modifyingother processes and structures for carrying out the same purposes and/orachieving the same advantages of the embodiments introduced herein.Those skilled in the art should also realize that such equivalentconstructions do not depart from the spirit and scope of the presentdisclosure, and that they may make various changes, substitutions, andalterations herein without departing from the spirit and scope of thepresent disclosure.

1. A method of manufacturing a semiconductor structure, comprising:providing a first die; forming a first molding to encapsulate the firstdie; disposing a second die over the first molding; disposing a moldchase over the second die and the first molding, wherein the mold chaseincludes a protrusion protruded from the mold chase towards the firstmolding; disposing a molding material between the mold chase and thefirst molding; and forming a second molding to surround the second die,wherein the second die is at least partially covered by the secondmolding, and the disposing the molding material includes surrounding theprotrusion of the mold chase by the molding material.
 2. The method ofclaim 1, further comprising: forming a recess extended through thesecond molding; and disposing a third die within the recess.
 3. Themethod of claim 2, wherein a sidewall of the recess of the secondmolding is conformal to an outer surface of the protrusion of the moldchase.
 4. The method of claim 1, wherein the second molding is formed bytransfer molding, compression molding or print molding operations. 5.The method of claim 1, further comprising: inserting the protrusion ofthe mold chase into the molding material; and disposing the protrusionof the mold chase over a surface of the second die.
 6. The method ofclaim 1, further comprising: forming a dielectric layer over the firstmolding; forming an interconnect structure in the dielectric layer;disposing the protrusion over a portion of the interconnect structureand a portion of the dielectric layer; and removing the mold chase.
 7. Asemiconductor structure comprising: a first dielectric layer; a firstdie disposed under the first dielectric layer and having a first surfacefacing the first dielectric layer and a second surface opposite to thefirst surface; a second die disposed over the first dielectric layer andhaving a third surface facing the first dielectric layer, a fourthsurface opposite to the third surface and a sidewall between the thirdsurface and the fourth surface; a first molding encapsulating the firstdie; and a second molding disposed over the first die and the firstdielectric layer, wherein the first surface of the first die and thethird surface of the second die are in contact with the first dielectriclayer, and the fourth surface and the sidewall of the second die isentirely exposed through the second molding.
 8. The semiconductorstructure of claim 7, wherein the first die comprises a sidewall betweenthe first surface and the second surface, and the sidewall and thesecond surface are in contact with the first molding.
 9. Thesemiconductor structure of claim 7, further comprising a seconddielectric layer under the first die, wherein the first die is separatedfrom the second dielectric layer by the first molding.
 10. Thesemiconductor structure of claim 9, further comprising a firstinterconnect structure in the first dielectric layer and electricallyconnected to the first die and the second die.
 11. The semiconductorstructure of claim 10, further comprising a second interconnectstructure in the second dielectric layer and electrically connected tothe first interconnect structure.
 12. The semiconductor structure ofclaim 11, further comprising a conductive via extending through thefirst molding and electrically connecting the first interconnectstructure and the second interconnect structure.
 13. The semiconductorstructure of claim 7, wherein the second molding comprises a curvedsidewall facing the sidewall of the second die.
 14. The semiconductorstructure of claim 7, wherein a top surface of the second molding is ata level substantially higher than a level of the fourth surface of thesecond die.
 15. The semiconductor structure of claim 7, wherein asidewall of the second molding is a curved surface.
 16. A semiconductorstructure comprising: a first dielectric layer; a first die disposedunder the first dielectric layer and having a first surface facing thefirst dielectric layer and a second surface opposite to the firstsurface; a second die disposed over the first dielectric layer andhaving a third surface facing the first dielectric layer and a fourthsurface opposite to the third surface; a first molding encapsulating thefirst die; and a second molding disposed over the first die and thefirst dielectric layer, wherein the first surface of the first die andthe third surface of the second die are in contact with the firstdielectric layer, and the fourth surface of the second die is partiallyexposed through the second molding and partially covered by the secondmolding.
 17. The semiconductor structure of claim 16, wherein the firstdie comprises a sidewall between the first surface and the secondsurface, and the sidewall and the second surface are in contact with thefirst molding.
 18. The semiconductor structure of claim 16, furthercomprising a second dielectric layer under the first die, wherein thefirst die is separated from the second dielectric layer by the firstmolding.
 19. The semiconductor structure of claim 18, furthercomprising: a first interconnect structure in the first dielectric layerand electrically connected to the first die and the second die; a secondinterconnect structure in the second dielectric layer and electricallyconnected to the first interconnect structure; and a conductive viaextending through the first molding and electrically connecting thefirst interconnect structure and the second interconnect structure. 20.The semiconductor structure of claim 16, wherein a thickness of thesecond molding is greater than a thickness of the second die.